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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A *Good Linearity of hFE *Complement to Type 2SC3944/A APPLICATIONS *Designed for low-frequency driver and high power amplification, is optimum for the driver-stage of a 60W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2SA1535 VCBO Collector-Base Voltage 2SA1535A 2SA1535 VCEO Collector-Emitter Voltage 2SA1535A VEBO IC IC Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25 Collector Power Dissipation @ Ta=25 Junction Temperature Storage Temperature Range -180 -5 -1 -1.5 15 W 2 150 -55~150 V A A -180 -150 V VALUE -150 V UNIT PC TJ Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1535/A TYP. MAX UNIT 2SA1535 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1535A IE= -10A ; IC= 0 IC= -50mA ; IB= 0 -150 V -180 V(BR)EBO Emitter-Base Breakdown Voltage -5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V A Collector Cutoff Current VCB= -150V ; IE= 0 -10 hFE-1 DC Current Gain IC= -150mA ; VCE= -10V 90 330 hFE-2 DC Current Gain IC= -0.5A ; VCE= -5V 50 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz IC= -50mA;VCE= -10V;ftest= 10MHz 30 pF fT Current-Gain--Bandwidth Product 200 MHz hFE-1 Classifications Q 90-155 R 130-220 S 185-330 isc Websitewww.iscsemi.cn 2 |
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